FDR856P Datasheet, Mosfet, Fairchild Semiconductor

FDR856P Features

• Mosfet - 6.3 A, -30 V, RDS(ON) =0.025 Ω @ VGS = -10 V RDS(ON) =0.040 Ω @ VGS = -4.5 V. SuperSOTTM-8 package: small footprint (40% less than SO-8);low profile (1mm thick);maximum power comperab

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Part number:

FDR856P

Manufacturer:

Fairchild Semiconductor

File Size:

223.77kb

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📄 Datasheet

Description:

P-channel mosfet. SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density,

FDR856P Application

• Applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are

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FDR856P

Fairchild Semiconductor

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