Datasheet Specifications
- Part number
- FDR856P
- Manufacturer
- Fairchild Semiconductor
- File Size
- 223.77 KB
- Datasheet
- FDR856P_FairchildSemiconductor.pdf
- Description
- P-Channel MOSFET
Description
March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General .
Features
* - 6.3 A, -30 V, RDS(ON) =0.025 Ω @ VGS = -10 V RDS(ON) =0.040 Ω @ VGS = -4.5 V. SuperSOTTM-8 package: small footprint (40% less than SO-8);low profile (1mm thick);maximum power comperable to SO-8. High density cell design for extremely low RDS(ON). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223FDR856P Distributors
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