Datasheet4U Logo Datasheet4U.com

FDR856P

P-Channel MOSFET

FDR856P Features

* - 6.3 A, -30 V, RDS(ON) =0.025 Ω @ VGS = -10 V RDS(ON) =0.040 Ω @ VGS = -4.5 V. SuperSOTTM-8 package: small footprint (40% less than SO-8);low profile (1mm thick);maximum power comperable to SO-8. High density cell design for extremely low RDS(ON). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223

FDR856P General Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are p.

FDR856P Datasheet (223.77 KB)

Preview of FDR856P PDF

Datasheet Details

Part number:

FDR856P

Manufacturer:

Fairchild Semiconductor

File Size:

223.77 KB

Description:

P-channel mosfet.

📁 Related Datasheet

FDR8508P P-Channel MOSFET (Fairchild Semiconductor)

FDR8521L P-Channel MOSFET (Fairchild Semiconductor)

FDR858P P-Channel MOSFET (Fairchild Semiconductor)

FDR8305N N-Channel MOSFET (Fairchild Semiconductor)

FDR8308P P-Channel MOSFET (Fairchild Semiconductor)

FDR8321L P-Channel MOSFET (Fairchild Semiconductor)

FDR836P P-Channel MOSFET (Fairchild Semiconductor)

FDR838P P-Channel MOSFET (Fairchild Semiconductor)

FDR840P P-Channel MOSFET (Fairchild Semiconductor)

FDR842P P-Channel MOSFET (Fairchild Semiconductor)

TAGS

FDR856P P-Channel MOSFET Fairchild Semiconductor

Image Gallery

FDR856P Datasheet Preview Page 2 FDR856P Datasheet Preview Page 3

FDR856P Distributor