FDS86140
Description
Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A - Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A - High performance trench technologh for extremely low rDS(on) - High power and current handing capability in a widely used surface mount package - 100% UIL Tested - RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
- Distributed Power Architectures and VRMs
