Datasheet Details
| Part number | FDS86140 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 257.83 KB |
| Description | MOSFET |
| Datasheet |
 FDS86140 Datasheet
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| Part number | FDS86140 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 257.83 KB |
| Description | MOSFET |
| Datasheet |
FDS86140 Datasheet
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Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A High performance trench technologh for extremely low rDS(on) High power and current handing capability in a widely used surface mount package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications DC/DC Converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Swith for 24 V and 48 V Systems High Voltage Synchronous Rectifier D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Dr
FDS86140 N-Channel PowerTrench® MOSFET March 2011 FDS86140 N-Channel PowerTrench® MOSFET 100 V, 11.2 A, 9.
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