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FDT457N - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 5 A, 30 V. RDS(ON) = 0.06 Ω @ VGS = 10 V RDS(ON) = 0.090 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S D SOT-223 S G D S G SOT-223.
  • (J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage TA = 25oC unless otherwise noted FDT457N 30 ±20 (Note 1a) Units V V A Gate-.

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Full PDF Text Transcription

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August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. Features 5 A, 30 V. RDS(ON) = 0.06 Ω @ VGS = 10 V RDS(ON) = 0.090 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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