FDT457N - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

5 A, 30 V. RDS(ON) = 0.06 Ω @ VGS = 10 V RDS(ON) = 0.090 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S D SOT-223 S G D S G SOT-223.
(J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage TA = 25oC unless otherwise noted FDT457N 30 ±20 (Note 1a) Units V V A Gate-.

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