FDY3000NZ Dual N-Channel Specified PowerTrench MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET January 2006 FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® M.
This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.

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Datasheet Specifications

Part number: FDY3000NZ
Manufacturer: Fairchild Semiconductor
File Size: 144.04 KB
Datasheet: FDY3000NZ_FairchildSemiconductor.pdf
Description: Dual N-Channel Specified PowerTrench MOSFET

Features

* 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V
* ESD protection diode (note 3)

Applications

* Li-Ion Battery Pack 6 5 4 1 2 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o S1 G1 D2 1 6 D1 2 3 5 4 G2 S2 Parameter Drain-Source Voltage Gate-Source Voltage
* Continuous
* Pulsed Power Dissipation (Steady State) Drain C

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FDY3000NZ Dual N-Channel Specified PowerTrench MOSFET Fairchild Semiconductor

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