FDY300NZ Datasheet | Fairchild Semiconductor

Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features - 600 m A, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V - ESD protection diode (note 3) - Ro HS pliant Applications - Li-Ion Battery Pack 1 S G G 1 3 S 2 D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation (Steady State) (Note 1a) 1a) Ratings 20 ± 12 600 1000 625 446 - 55 to +150 Unit s V V m A m W °C (Note 1a) 1a) (Note 1b) 1 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) (Note 1b) 1 200 280 °C/W Package Marking and Ordering Information Device Marking C Device FDY300NZ Reel Size 7 ’’ Tape width 8 mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDY300NZ Rev A .fairchildsemi. FDY300NZ Single N-Channel 2.5V Specified Power Trench® MOSFET Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS...