FDY3000NZ Datasheet | Fairchild Semiconductor

Description This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features - 600 m A, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V - ESD protection diode (note 3) - Ro HS pliant Applications - Li-Ion Battery Pack 6 5 4 1 2 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o S1 G1 D2 D1 2 3 5 4 G2 S2 Parameter Drain-Source Voltage Gate-Source Voltage - Continuous - Pulsed Power Dissipation (Steady State) Drain Current (Note 1a) Ratings 20 ± 12 600 1000 625 446 - 55 to +150 Units V V m A m W °C (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 200 280 °C/W Package Marking and Ordering Information Device Marking C Device FDY3000NZ Reel Size 7 ’’ Tape width 8 mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDY3000NZ Rev...