FDY3001NZ Datasheet | Fairchild Semiconductor

Description This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features - 200 m A, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V - ESD protection diode (note 3) - Ro HS pliant Applications - Li-Ion Battery Pack S1 G1 1 2 3 6 5 4 D1 G2 S2 D2 TA=25o C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) 1a) Ratings 20 ± 12 200 1000 625 446 - 55 to +150 Units V V m A m W °C - Pulsed Power Dissipation (Steady State) (Note 1a) 1a) (Note 1b) 1 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) (Note 1b) 1 200...