FDY3001NZ Description
This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v.
FDY3001NZ Key Features
- 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V
- ESD protection diode (note 3)
- RoHS pliant