FDY301NZ Datasheet | Fairchild Semiconductor

Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. IGN Applications ES - Li-Ion Battery Pack - 200 m A, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V - ESD protection diode (note 3) - Ro HS pliant UFOER Nm DEi W DN 1S IND se IO G 1 T NDE R on MAT G NOMMET YOUINFOR S 2 COT RECNTAC FOR D NO CO IVE Absolute Maximum Ratings TA=25o C unless otherwise noted ISIS SE AT Symbol Parameter E A NT VDSS D IC LE E VGSS V P ES ID IS DE EPR PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation (Steady State) (Note 1a) 1a) (Note 1a) 1a) (Note 1b) 1 TH R TJ, TSTG Operating and Storage Junction Temperature Ratings 20 ± 12 200 1000 625 446 - 55 to +150 3D Units V V m A m W °C Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1 °C/W Package Marking and Ordering...