FDZ192NZ N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET

Fairchild Semiconductor

Description

FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET January 2010 FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET 2.
Designed on Fairchild's advanced 1.

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Datasheet Specifications

Part number: FDZ192NZ
Manufacturer: Fairchild Semiconductor
File Size: 260.87 KB
Datasheet: FDZ192NZ-FairchildSemiconductor.pdf
Description: N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET

Features

* Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 2.0 A
* Max rDS(on) = 43 mΩ at VGS = 2.5 V, ID = 2.0 A
* Max rDS(on) = 49 mΩ at VGS = 1.8 V, ID = 1.0 A
* Max rDS(on) = 55 mΩ at VGS = 1.5 V, ID = 1.0 A
* Occupies only 1.5 mm2 of PCB area. Less than 50% of the area of

Applications

* Battery management
* Load switch
* Battery protection PIN1 S SG DS D BOTTOM TOP WL-CSP 1x1.5 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed TA

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FDZ192NZ N-Channel 1.5 Specified PowerTrench Thin WL-CSP MOSFET Fairchild Semiconductor

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