FDZ192NZ Datasheet - Fairchild Semiconductor

FDZ192NZ N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET

Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ192NZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal .

FDZ192NZ Features

* Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 2.0 A

* Max rDS(on) = 43 mΩ at VGS = 2.5 V, ID = 2.0 A

* Max rDS(on) = 49 mΩ at VGS = 1.8 V, ID = 1.0 A

* Max rDS(on) = 55 mΩ at VGS = 1.5 V, ID = 1.0 A

* Occupies only 1.5 mm2 of PCB area.Less than 50% of the area of

FDZ192NZ-FairchildSemiconductor.pdf