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BB 112 Silicon Variable Capacitance Diode q q BB 112 For AM tuning applications Specified tuning range 1 … 8.0 V Type BB 112 Marking – Ordering

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FDC6306P February 1999 FDC6306P Dual P-Channel 2.5V Specified PowerTrench™ MOSFET General Description These P-Channel 2.5V specified MOSFETs are pro

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FDS8433A October 1998 PRELIMINARY FDS8433A Single P-Channel 2.5V Specified MOSFET General Description This P-Channel enhancement mode power field ef

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FDW2503N April 2000 PRELIMINARY FDW2503N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET

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FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET c May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET tmM Features

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FDC6318P December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are pro

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FDS9933A November 1998 FDS9933A Dual P-Channel 2.5V Specified PowerTrench™ MOSFET General Description These P-Channel 2.5V specified MOSFETs are pro

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www.DataSheet4U.com FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET January 2006 FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench® M

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PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT μPD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Desc

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FDC6000NZ June 2004 FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugge

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FDC6308P July 1999 FDC6308P Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged

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FDFC3N108 January 2004 FDFC3N108 N-Channel 1.8V Specified PowerTrench® MOSFET with Schottky Diode General Description This N-Channel 1.8V specified

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FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDG328P October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a

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FDG330P December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDS6815 July 1999 ADVANCE INFORMATION FDS6815 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified

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FDS9431A September 1999 FDS9431A P-Channel 2.5V Specified MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchil

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FDW2501N May 2000 PRELIMINARY FDW2501N Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is

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FDW2504P April 2000 PRELIMINARY FDW2504P Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET

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FDW2508P December 2001 FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description This P-Channel –1.8V specified MOSFET uses Fa

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