FDY3001NZ Dual N-Channel Specified PowerTrench MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET January 2006 FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench® M.
This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.

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Datasheet Specifications

Part number: FDY3001NZ
Manufacturer: Fairchild Semiconductor
File Size: 237.74 KB
Datasheet: FDY3001NZ_FairchildSemiconductor.pdf
Description: Dual N-Channel Specified PowerTrench MOSFET

Features

* 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V
* ESD protection diode (note 3)

Applications

* Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2 1 2 D2 3 TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous (Note 1a) 1a) Ratings 20 ± 12 200 1000 6

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FDY3001NZ Dual N-Channel Specified PowerTrench MOSFET Fairchild Semiconductor

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