FDY100PZ Single P-Channel Specified PowerTrench MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com January 2006 FDY100PZ Single P-Channel ( * 2.5V) Specified PowerTrench® MOSFET FDY100PZ Single P-Channel ( * 2.5V.
This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS =.

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Datasheet Specifications

Part number: FDY100PZ
Manufacturer: Fairchild Semiconductor
File Size: 202.14 KB
Datasheet: FDY100PZ_FairchildSemiconductor.pdf
Description: Single P-Channel Specified PowerTrench MOSFET

Features

* 350 mA,
* 20 V RDS(ON) = 1.2 Ω @ VGS =
* 4.5 V RDS(ON) = 1.6 Ω @ VGS =
* 2.5 V
* ESD protection diode (note 3)

Applications

* Li-Ion Battery Pack 1 S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25oC unless otherwise noted G 1 3 D S 2 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed (Note 1a) 1a) Ratings
* 20 ±8
* 350

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FDY100PZ Single P-Channel Specified PowerTrench MOSFET Fairchild Semiconductor

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