* This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. IGN Applications ES
* Li-Ion Battery Pack
* 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 500 mΩ @ VGS = 2.5 V
* ESD pr
FDY302NZ Datasheet (818.57 KB)
FDY302NZ
Fairchild Semiconductor
818.57 KB
Single n-channel 2.5v specified powertrench mosfet.
FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET
FDY302NZ
Single N-Channel 2.5V Specified PowerTrench® MOSFET
JUNE 2024
General Descrip.
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