FDY300NZ Single N-Channel Specified PowerTrench MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com FDY300NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET January 2006 FDY300NZ Single N-Channel 2.5V Specified PowerTrench®.
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.

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Datasheet Specifications

Part number: FDY300NZ
Manufacturer: Fairchild Semiconductor
File Size: 208.34 KB
Datasheet: FDY300NZ_FairchildSemiconductor.pdf
Description: Single N-Channel Specified PowerTrench MOSFET

Features

* 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V
* ESD protection diode (note 3)

Applications

* Li-Ion Battery Pack 1 S G G 1 3 S 2 D D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Power Dissipation (Steady State) (Note 1a) 1a) Ratin

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FDY300NZ Single N-Channel Specified PowerTrench MOSFET Fairchild Semiconductor

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