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FDC6308P Datasheet - Fairchild Semiconductor

FDC6308P Dual P-Channel 2.5V Specified PowerTrench MOSFET

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). These devices have been designed to offer exceptional power dissipati.

FDC6308P Features

* • -1.7 A, -18 V. RDS(ON) = 0.18 Ω @ VGS = -4.5 V RDS(ON) = 0.30 Ω @ VGS = -2.5 V • • • • • Extended VGSS range (±12V) for battery applications. Low gate charge (3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications • Load switch • Battery p

FDC6308P_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDC6308P

Manufacturer:

Fairchild Semiconductor

File Size:

325.14 KB

Description:

Dual p-channel 2.5v specified powertrench mosfet.

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FDC6308P FDC6308P Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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