FDC6302P - Digital FET/ Dual P-Channel

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC6302P
Manufacturer	Fairchild Semiconductor
File Size	76.02 KB
Description	Digital FET/ Dual P-Channel
Datasheet	FDC6302P Datasheet
Additional preview pages of the FDC6302P datasheet.

Product details

Description

These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

-25 V, -0.12 A continuous, -0.5 A Peak. R DS(ON) = 13 Ω @ VGS= -2.7 V R DS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 4 3 5 2 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Volt.

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Published: Mar 30, 2005 |