FDC6302P

Digital FET/ Dual P-Channel

Fairchild Semiconductor

FDC6302P Features

* -25 V, -0.12 A continuous, -0.5 A Peak. R DS(ON) = 13 Ω @ VGS= -2.7 V R DS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple PNP digital transistors

FDC6302P General Description

These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage a.

FDC6302P Datasheet (76.02 KB)

FDC6302P Datasheet Preview — Preview of FDC6302P PDF

Datasheet Details

Part number:

FDC6302P

Manufacturer:

Fairchild Semiconductor

File Size:

76.02 KB

Description:

Digital fet/ dual p-channel.

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FDC6302P Digital FET Dual P-Channel Fairchild Semiconductor

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FDC6302P Features

FDC6302P General Description

Datasheet Details

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