FDC6304P

Digital FET/ Dual P-Channel

Fairchild Semiconductor

FDC6304P Features

* -25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .304 Super

FDC6304P General Description

These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in batt.

FDC6304P Datasheet (74.28 KB)

FDC6304P Datasheet Preview — Preview of FDC6304P PDF

Datasheet Details

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FDC6304P

Manufacturer:

Fairchild Semiconductor

File Size:

74.28 KB

Description:

Digital fet/ dual p-channel.

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FDC6304P Digital FET Dual P-Channel Fairchild Semiconductor

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FDC6304P Features

FDC6304P General Description

Datasheet Details

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