FDC6301N

Dual N-Channel / Digital FET

Fairchild Semiconductor

FDC6301N Features

* 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .301 SuperSOTTM-8 SO

FDC6301N General Description

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage .

FDC6301N Datasheet (73.93 KB)

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Datasheet Details

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FDC6301N

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Fairchild Semiconductor

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73.93 KB

Description:

Dual n-channel / digital fet.

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FDC6301N Dual N-Channel Digital FET Fairchild Semiconductor

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FDC6301N Features

FDC6301N General Description

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