FDC6301N - Dual N-Channel / Digital FET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC6301N
Manufacturer	Fairchild Semiconductor
File Size	73.93 KB
Description	Dual N-Channel / Digital FET
Datasheet	FDC6301N Datasheet
Additional preview pages of the FDC6301N datasheet.

Product details

Description

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology.

Features

25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .301 SuperSOTTM-8 SO-8 SOT-223 SOIC-16.

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Published: Mar 30, 2005 |