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FDC6310P Datasheet - ON Semiconductor

FDC6310P Dual P-Channel MOSFET

These P *Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on *state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

FDC6310P Features

* 2.2 A,

* 20 V

* RDS(ON) = 125 mW @ VGS =

* 4.5 V

* RDS(ON) = 190 mW @ VGS =

* 2.5 V

* Low Gate Charge

* Fast Switching Speed

* High Performance Trench Technology for Extremely Low RDS(ON)

* SUPERSOTt

* 6 Pa

FDC6310P-ONSemiconductor.pdf

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Datasheet Details

Part number:

FDC6310P

Manufacturer:

ON Semiconductor ↗

File Size:

275.33 KB

Description:

Dual p-channel mosfet.

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FDC6310P FDC6310P Dual P-Channel MOSFET ON Semiconductor

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