FDC6310P - Dual P-Channel MOSFET
These P *Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on *state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptiona
FDC6310P Features
* 2.2 A,
* 20 V
* RDS(ON) = 125 mW @ VGS =
* 4.5 V
* RDS(ON) = 190 mW @ VGS =
* 2.5 V
* Low Gate Charge
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* SUPERSOTt
* 6 Pa
