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FDC6310P

Dual P-Channel MOSFET

FDC6310P Features

* 2.2 A,

* 20 V

* RDS(ON) = 125 mW @ VGS =

* 4.5 V

* RDS(ON) = 190 mW @ VGS =

* 2.5 V

* Low Gate Charge

* Fast Switching Speed

* High Performance Trench Technology for Extremely Low RDS(ON)

* SUPERSOTt

* 6 Pa

FDC6310P General Description

These P

*Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on

*state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

FDC6310P Datasheet (275.33 KB)

Preview of FDC6310P PDF

Datasheet Details

Part number:

FDC6310P

Manufacturer:

ON Semiconductor ↗

File Size:

275.33 KB

Description:

Dual p-channel mosfet.

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TAGS

FDC6310P Dual P-Channel MOSFET ON Semiconductor

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