FDC6312P - Dual P-Channel MOSFET

Fairchild Semiconductor

FDC6312P Datasheet Preview — Preview of FDC6312P PDF

Datasheet Details

Part number	FDC6312P
Manufacturer	Fairchild ↗ Semiconductor
File Size	88.82 KB
Description	Dual P-Channel MOSFET
Datasheet	FDC6312P_FairchildSemiconductor.pdf

FDC6312P Product details

Description

These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

2.3 A,.
20 V. RDS(ON) = 115 mΩ @ VGS =.
4.5 V RDS(ON) = 155 mΩ @ VGS =.
2.5 V RDS(ON) = 225 mΩ @ VGS =.
1.8 V.
High performance trench technology for extremely low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Published: Mar 30, 2005 |