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FDC6312P Dual P-Channel MOSFET

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Description

FDC6312P January 2001 FDC6312P Dual P-Channel 1.8V PowerTrench Specified MOSFET General .
These P-Channel 1.

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Datasheet Specifications

Part number
FDC6312P
Manufacturer
Fairchild Semiconductor
File Size
88.82 KB
Datasheet
FDC6312P_FairchildSemiconductor.pdf
Description
Dual P-Channel MOSFET

Features

* 2.3 A,
* 20 V. RDS(ON) = 115 mΩ @ VGS =
* 4.5 V RDS(ON) = 155 mΩ @ VGS =
* 2.5 V RDS(ON) = 225 mΩ @ VGS =
* 1.8 V
* High performance trench technology for extremely low RDS(ON)
* SuperSOTTM-6 package: small footprint (72% smaller than st

Applications

* Power management
* Load switch D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 TA=25oC unless otherwise noted 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Parameter Ratings

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