FDC6303N - Dual N-Channel Digital FET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC6303N
Manufacturer	Fairchild Semiconductor
File Size	72.13 KB
Description	Dual N-Channel Digital FET
Datasheet	FDC6303N Datasheet
Additional preview pages of the FDC6303N datasheet.

Product details

Description

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.6 Ω @ VGS = 2.7 V RDS(ON) = 0.45 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 Mark: .303 4 3 5 2 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Sour.

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Published: Mar 30, 2005 |