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FDC6303N Dual N-Channel Digital FET

FDC6303N Description

August 1997 FDC6303N Digital FET, Dual N-Channel General .
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technol.

FDC6303N Features

* 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.6 Ω @ VGS = 2.7 V RDS(ON) = 0.45 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors (IMHx

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Datasheet Details

Part number
FDC6303N
Manufacturer
Fairchild Semiconductor
File Size
72.13 KB
Datasheet
FDC6303N_FairchildSemiconductor.pdf
Description
Dual N-Channel Digital FET

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Dual N-Channel Digital FET Fairchild Semiconductor
Fairchild Semiconductor FDC6303N-like datasheet