FDC6303N

Dual N-Channel Digital FET

Fairchild Semiconductor

FDC6303N Features

* 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.6 Ω @ VGS = 2.7 V RDS(ON) = 0.45 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors (IMHx

FDC6303N General Description

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage a.

FDC6303N Datasheet (72.13 KB)

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Datasheet Details

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FDC6303N

Manufacturer:

Fairchild Semiconductor

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72.13 KB

Description:

Dual n-channel digital fet.

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FDC6303N Dual N-Channel Digital FET Fairchild Semiconductor

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FDC6303N Features

FDC6303N General Description

Datasheet Details

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