Datasheet4U Logo Datasheet4U.com

FDC6306P Datasheet - Fairchild Semiconductor

FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

FDC6306P Features

* -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V

* Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller t

FDC6306P_FairchildSemiconductor.pdf

Preview of FDC6306P PDF
FDC6306P Datasheet Preview Page 2 FDC6306P Datasheet Preview Page 3

Datasheet Details

Part number:

FDC6306P

Manufacturer:

Fairchild Semiconductor

File Size:

235.42 KB

Description:

Dual p-channel 2.5v specified powertrench mosfet.

📁 Related Datasheet

FDC6306P Dual P-Channel 20V MOSFET (VBsemi)

FDC6306P P-Channel MOSFET (onsemi)

FDC6301N Dual N-Channel / Digital FET (Fairchild Semiconductor)

FDC6301N Dual N-Channel Digital FET (ON Semiconductor)

FDC6302P Digital FET/ Dual P-Channel (Fairchild Semiconductor)

FDC6302P Dual P-Channel MOSFET (ON Semiconductor)

FDC6303N Dual N-Channel Digital FET (Fairchild Semiconductor)

FDC6303N Dual N-Channel Digital FET (onsemi)

TAGS

FDC6306P FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

FDC6306P Distributor