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FDC6306P

Dual P-Channel 2.5V Specified PowerTrench MOSFET

FDC6306P Features

* -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V

* Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller t

FDC6306P General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

FDC6306P Datasheet (235.42 KB)

Preview of FDC6306P PDF

Datasheet Details

Part number:

FDC6306P

Manufacturer:

Fairchild Semiconductor

File Size:

235.42 KB

Description:

Dual p-channel 2.5v specified powertrench mosfet.

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TAGS

FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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