FDC6306P - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC6306P
Manufacturer	Fairchild Semiconductor
File Size	235.42 KB
Description	Dual P-Channel 2.5V Specified PowerTrench MOSFET
Datasheet	FDC6306P Datasheet
Additional preview pages of the FDC6306P datasheet.

Product details

Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V.
Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Published: Mar 30, 2005 |