FDC6321C Datasheet (ON Semiconductor) - Dual N & P-Channel Digital FET

FDC6321C, Dual N & P-Channel Digital FET

These dual N & P Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on *state resistance.

This device has been designed especially for low

FDC6321C Features

* N

* Channel 0.68 A, 25 V RDS(ON) = 0.45 W @ VGS = 4.5 V

* P

* Channel

* 0.46 A,

* 25 V RDS(ON) = 1.1 W @ VGS =

* 4.5 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.0 V.

* Gate