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FDC6322C Dual N & P Channel / Digital FET

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Description

November 1997 FDC6322C Dual N & P Channel , Digital FET General .
These dual N & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density, DMOS tech.

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Datasheet Specifications

Part number
FDC6322C
Manufacturer
Fairchild Semiconductor
File Size
96.76 KB
Datasheet
FDC6322C_FairchildSemiconductor.pdf
Description
Dual N & P Channel / Digital FET

Features

* N-Ch 25 V, 0.22 A, RDS(ON) = 5 Ω @ VGS= 2.7 V. P-Ch 25 V, -0.46 A, RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace NPN & PNP digital transistors. SOT

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