FDC6322C

Dual N & P Channel / Digital FET

Fairchild Semiconductor

FDC6322C Features

* N-Ch 25 V, 0.22 A, RDS(ON) = 5 Ω @ VGS= 2.7 V. P-Ch 25 V, -0.46 A, RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace NPN & PNP digital transistors. SOT

FDC6322C General Description

These dual N & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The device is an improved design especially for low vol.

FDC6322C Datasheet (96.76 KB)

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FDC6322C

Manufacturer:

Fairchild Semiconductor

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96.76 KB

Description:

Dual n & p channel / digital fet.

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FDC6322C Dual Channel Digital FET Fairchild Semiconductor

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FDC6322C Features

FDC6322C General Description

Datasheet Details

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