FDC6327C
FDC6327C is Dual-Channel MOSFET manufactured by onsemi.
Description
These N & P- Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on- state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO- 8 and TSSOP- 8 packages are impractical.
Features
- N- Channel 2.7 A, 20 V
RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V
- P- Channel
- 1.6 A,
- 20 V
RDS(ON) = 0.17 W @ VGS =
- 4.5 V RDS(ON) = 0.25 W @ VGS =
- 2.5 V
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt- 6 Package: Small Footprint (72% Smaller than
SO- 8); Low Profile (1 mm Thick)
- This is a Pb- Free Device
Applications
- DC/DC Converter
- Load Switch
- Motor Driving
DATA SHEET .onsemi.
VDSS 20 V
VDSS
- 20 V
RDS(ON) MAX 0.08 W @ 4.5 V 0.12 W @ 2.5 V
RDS(ON) MAX 0.17 W @
- 4.5 V 0.25 W @
- 2.5 V
ID MAX 2.7 A
ID MAX
- 1.6 A
D2 S1 D1
G2 G1S2 TSOT23 6- Lead SUPERSOTt- 6 CASE 419BL
MARKING DIAGRAM
327 MG G
1 327 = Specific Device Code M = Assembly Operation Month G = Pb- Free Package
(Note: Microdot may be in either location)
PINOUT...
