Datasheet4U Logo Datasheet4U.com

FDC6327C - Dual-Channel MOSFET

Description

These N & P Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on

state resistance and yet maintain low gate charge for superior switching performance.

Features

  • N.
  • Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V.
  • P.
  • Channel.
  • 1.6 A,.
  • 20 V RDS(ON) = 0.17 W @ VGS =.
  • 4.5 V RDS(ON) = 0.25 W @ VGS =.
  • 2.5 V.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 6 Package: Small Footprint (72% Smaller than SO.
  • 8); Low Profile (1 mm Thick).
  • This is a.

📥 Download Datasheet

Datasheet preview – FDC6327C

Datasheet Details

Part number FDC6327C
Manufacturer ON Semiconductor
File Size 357.25 KB
Description Dual-Channel MOSFET
Datasheet download datasheet FDC6327C Datasheet
Additional preview pages of the FDC6327C datasheet.

📁 Similar Datasheet

  • FDC6327C - Dual N & P-Channel 2.5V MOSFET (Fairchild Semiconductor)
  • FDC6320C - Dual N & P Channel / Digital FET (Fairchild Semiconductor)
  • FDC6321C - Dual N & P Channel / Digital FET (Fairchild Semiconductor)
  • FDC6322C - Dual N & P Channel / Digital FET (Fairchild Semiconductor)
  • FDC6323L - Integrated Load Switch (Fairchild Semiconductor)
  • FDC6324L - Integrated Load Switch (Fairchild Semiconductor)
  • FDC6325L - Integrated Load Switch (Fairchild Semiconductor)
  • FDC6326L - Integrated Load Switch (Fairchild Semiconductor)
  • FDC6329L - Integrated Load Switch (Fairchild Semiconductor)
  • FDC6301N - Dual N-Channel / Digital FET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFET – Dual, N & P-Channel, POWERTRENCH) 2.5 V Specified FDC6327C General Description These N & P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features • N−Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V • P−Channel −1.6 A, −20 V RDS(ON) = 0.17 W @ VGS = −4.5 V RDS(ON) = 0.25 W @ VGS = −2.
Published: |