FDC6327C
Description
These N & P-Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- N-Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V
- P-Channel -1.6 A, -20 V RDS(ON) = 0.17 W @ VGS = -4.5 V RDS(ON) = 0.25 W @ VGS = -2.5 V
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-6 Package: Small Footprint (72% Smaller than SO-8); Low Profile (1 mm Thick)
- This is a Pb-Free Device
