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FDC6301N

Dual N-Channel Digital FET

FDC6301N Features

* 25 V, 0.22 A Continuous, 0.5 A Peak

* RDS(on) = 5 W @ VGS = 2.7 V

* RDS(on) = 4 W @ VGS = 4.5 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V

* Gate

* Source Zener for ESD Ruggedness. >6 kV Human Bo

FDC6301N General Description

These dual N

*Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on

*state resistance. This device has been designed especially for .

FDC6301N Datasheet (315.50 KB)

Preview of FDC6301N PDF

Datasheet Details

Part number:

FDC6301N

Manufacturer:

ON Semiconductor ↗

File Size:

315.50 KB

Description:

Dual n-channel digital fet.

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TAGS

FDC6301N Dual N-Channel Digital FET ON Semiconductor

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