FDC6301N Dual N-Channel Digital FET

ON Semiconductor

Description

Dual, N-Channel, Digital FET FDC6301N General .
These dual N. Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS te.

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Datasheet Specifications

Part number: FDC6301N
Manufacturer: ON Semiconductor ↗
File Size: 315.50 KB
Datasheet: FDC6301N-ONSemiconductor.pdf
Description: Dual N-Channel Digital FET

Features

* 25 V, 0.22 A Continuous, 0.5 A Peak
* RDS(on) = 5 W @ VGS = 2.7 V
* RDS(on) = 4 W @ VGS = 4.5 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V
* Gate
* Source Zener for ESD Ruggedness. >6 kV Human Bo

Applications

* as a replacement for digital transistors. Since bias resistors are not required, these N

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FDC6301N Dual N-Channel Digital FET ON Semiconductor

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