Datasheet4U Logo Datasheet4U.com

FDC6301N - Dual N-Channel Digital FET

Datasheet Summary

Description

These dual N

transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

Features

  • 25 V, 0.22 A Continuous, 0.5 A Peak.
  • RDS(on) = 5 W @ VGS = 2.7 V.
  • RDS(on) = 4 W @ VGS = 4.5 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
  • Gate.
  • Source Zener for ESD Ruggedness. >6 kV Human Body Model.
  • This is a Pb.
  • Free and Halide Free Device DATA SHEET www. onsemi. com D2 S1 D1 G2 G1S2 TSOT23 6.
  • Lead SUPERSOTt.
  • 6 CASE 419BL.

📥 Download Datasheet

Datasheet preview – FDC6301N

Datasheet Details

Part number FDC6301N
Manufacturer ON Semiconductor
File Size 315.50 KB
Description Dual N-Channel Digital FET
Datasheet download datasheet FDC6301N Datasheet
Additional preview pages of the FDC6301N datasheet.

📁 Similar Datasheet

  • FDC6301N - Dual N-Channel / Digital FET (Fairchild Semiconductor)
  • FDC6302P - Digital FET/ Dual P-Channel (Fairchild Semiconductor)
  • FDC6303N - Dual N-Channel Digital FET (Fairchild Semiconductor)
  • FDC6303N - Dual N-Channel Digital FET (onsemi)
  • FDC6304P - Digital FET/ Dual P-Channel (Fairchild Semiconductor)
  • FDC6305N - Dual N-Channel MOSFET (Fairchild Semiconductor)
  • FDC6306P - Dual P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
  • FDC6306P - Dual P-Channel 20V MOSFET (VBsemi)
  • FDC6306P - P-Channel MOSFET (onsemi)
  • FDC6308P - Dual P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Dual, N-Channel, Digital FET FDC6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N−Channel FET’s can replace several digital transistors, with a variety of bias resistors. Features • 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V • Gate−Source Zener for ESD Ruggedness.
Published: |