FDC6301N Datasheet, Fet, ON Semiconductor

FDC6301N Features

• Fet
• 25 V, 0.22 A Continuous, 0.5 A Peak
• RDS(on) = 5 W @ VGS = 2.7 V
• RDS(on) = 4 W @ VGS = 4.5 V
• Very Low Level Gate Drive Requirements Allowing Direc

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Part number:

FDC6301N

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ON Semiconductor ↗

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📄 Datasheet

Description:

Dual n-channel digital fet. These dual N

Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell

FDC6301N Application

• Applications as a replacement for digital transistors. Since bias resistors are not required, these N
• Channel FET’s can replace several digi

TAGS

FDC6301N

ON Semiconductor

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