FDC6310P - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor

FDC6310P Datasheet Preview — Preview of FDC6310P PDF

Datasheet Details

Part number	FDC6310P
Manufacturer	Fairchild ↗ Semiconductor
File Size	69.39 KB
Description	Dual P-Channel 2.5V Specified PowerTrench MOSFET
Datasheet	FDC6310P_FairchildSemiconductor.pdf

FDC6310P Product details

Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

2.2 A,.
20 V. RDS(ON) = 125 mΩ @ V GS =.
4.5 V RDS(ON) = 190 mΩ @ V GS =.
2.5 V.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile (1mm thick).

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Published: Mar 30, 2005 |