FDC6310P Datasheet - Fairchild Semiconductor

FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

FDC6310P Features

* 2.2 A,

* 20 V. RDS(ON) = 125 mΩ @ V GS =

* 4.5 V RDS(ON) = 190 mΩ @ V GS =

* 2.5 V

* Low gate charge

* Fast switching speed

* High performance trench technology for extremely low RDS(ON)

* SuperSOT TM -6 package: small footprint

FDC6310P_FairchildSemiconductor.pdf

FDC6310P Datasheet Preview — Preview of FDC6310P PDF

Datasheet Details

Part number:

FDC6310P

Manufacturer:

Fairchild Semiconductor

File Size:

69.39 KB

Description:

Dual p-channel 2.5v specified powertrench mosfet.

📁 Related Datasheet

FDC6310P Dual P-Channel MOSFET (ON Semiconductor)

FDC6312P Dual P-Channel MOSFET (Fairchild Semiconductor)

FDC6312P Dual P-Channel 20V MOSFET (VBsemi)

FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET (Fairchild Semiconductor)

FDC6301N Dual N-Channel / Digital FET (Fairchild Semiconductor)

FDC6301N Dual N-Channel Digital FET (ON Semiconductor)

FDC6302P Digital FET/ Dual P-Channel (Fairchild Semiconductor)

FDC6302P Dual P-Channel MOSFET (ON Semiconductor)

TAGS

FDC6310P FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

FDC6310P Distributor