FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET

Fairchild Semiconductor

Description

FDC6318P December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General .
These P-Channel 1.

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Datasheet Specifications

Part number: FDC6318P
Manufacturer: Fairchild Semiconductor
File Size: 165.22 KB
Datasheet: FDC6318P_FairchildSemiconductor.pdf
Description: Dual P-Channel 1.8V PowerTrench Specified MOSFET

Features

* 2.5 A,
* 12 V. RDS(ON) = 90 mΩ @ VGS =
* 4.5 V RDS(ON) = 125 mΩ @ VGS =
* 2.5 V RDS(ON) = 200 mΩ @ VGS =
* 1.8 V
* High performance trench technology for extremely low RDS(ON)
* SuperSOTTM-6 package: small footprint (72% smaller than sta

Applications

* Power management
* Load switch S1 D1 D2 4 5 G2 3 2 1 SuperSOT TM -6 G1 S2 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25oC unless otherwise noted Parameter Ratings

FDC6318P Distributors

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FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET Fairchild Semiconductor

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