FDC6318P - Dual P-Channel 1.8V PowerTrench Specified MOSFET

Fairchild Semiconductor

FDC6318P Datasheet Preview — Preview of FDC6318P PDF

Datasheet Details

Part number	FDC6318P
Manufacturer	Fairchild ↗ Semiconductor
File Size	165.22 KB
Description	Dual P-Channel 1.8V PowerTrench Specified MOSFET
Datasheet	FDC6318P_FairchildSemiconductor.pdf

FDC6318P Product details

Description

These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

2.5 A,.
12 V. RDS(ON) = 90 mΩ @ VGS =.
4.5 V RDS(ON) = 125 mΩ @ VGS =.
2.5 V RDS(ON) = 200 mΩ @ VGS =.
1.8 V.
High performance trench technology for extremely low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Published: Mar 30, 2005 |