FDC6320C

Dual N & P Channel Digital FET

ON Semiconductor

FDC6320C Features

* N-Ch 25 V, 0.22 A, RDS(ON) = 5 Ω @ VGS= 2.7 V. P-Ch 25 V, -0.12 A, RDS(ON) = 13 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace NPN & PNP digital transistors. SOT-

FDC6320C General Description

These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The device is an improved design especially for.

FDC6320C Datasheet (490.96 KB)