FDC6305N - Dual N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC6305N
Manufacturer	Fairchild Semiconductor
File Size	246.27 KB
Description	Dual N-Channel MOSFET
Datasheet	FDC6305N Datasheet
Additional preview pages of the FDC6305N datasheet.

Product details

Description

These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

2.7 A, 20 V. RDS(ON) = 0.08 Ω @ VGS = 4.5 V RDS(ON) = 0.12 Ω @ VGS = 2.5 V.
Low gate charge (3.5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Published: Mar 30, 2005 |