FDC6305N Datasheet - Fairchild Semiconductor

FDC6305N, Dual N-Channel MOSFET

FDC6305N March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General .
These N-Channel low threshold 2.

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Datasheet Details

Part number:

FDC6305N

Manufacturer:

Fairchild Semiconductor

File Size:

246.27 KB

Description:

Dual N-Channel MOSFET

Features

* 2.7 A, 20 V. RDS(ON) = 0.08 Ω @ VGS = 4.5 V RDS(ON) = 0.12 Ω @ VGS = 2.5 V
* Low gate charge (3.5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than

Applications

* Load switch
* DC/DC converter
* Motor driving D2 S1 D1 5 2 4 3 G2 SuperSOT TM -6 S2 G1 TA = 25°C unless otherwise noted 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Rating

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FDC6305N Dual N-Channel MOSFET Fairchild Semiconductor

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