FDC6303N Dual N-Channel Digital FET

onsemi

Description

DATA SHEET www.onsemi.com Digital FET, Dual N-Channel FDC6303N General .
These dual N. Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS te.

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Datasheet Specifications

Part number: FDC6303N
Manufacturer: onsemi
File Size: 263.56 KB
Datasheet: FDC6303N-onsemi.pdf
Description: Dual N-Channel Digital FET

Features

* 25 V, 0.68 A Continuous, 2 A Peak
* RDS(on) = 0.6 W @ VGS = 2.7 V
* RDS(on) = 0.45 W @ VGS= 4.5 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1.5 V
* Gate
* Source Zener for ESD Ruggedness, >6 kV Human

Applications

* as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N

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FDC6303N Dual N-Channel Digital FET onsemi

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