FDC6303N

Dual N-Channel Digital FET

onsemi

FDC6303N Features

* 25 V, 0.68 A Continuous, 2 A Peak

* RDS(on) = 0.6 W @ VGS = 2.7 V

* RDS(on) = 0.45 W @ VGS= 4.5 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1.5 V

* Gate

* Source Zener for ESD Ruggedness, >6 kV Human

FDC6303N General Description

These dual N

*Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on

*state resistance. This device has been designed especially for .

FDC6303N Datasheet (263.56 KB)

FDC6303N Datasheet Preview — Preview of FDC6303N PDF

Datasheet Details

Part number:

FDC6303N

Manufacturer:

onsemi

File Size:

263.56 KB

Description:

Dual n-channel digital fet.

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FDC6303N Dual N-Channel Digital FET onsemi

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FDC6303N Features

FDC6303N General Description

Datasheet Details

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Description:

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