Datasheet4U Logo Datasheet4U.com

FDG330P

P-Channel 1.8V Specified PowerTrench MOSFET

FDG330P Features

* 2 A,

* 12 V. RDS(ON) = 110 mΩ @ VGS =

* 4.5 V RDS(ON) = 150 mΩ @ VGS =

* 2.5 V RDS(ON) = 215 mΩ @ VGS =

* 1.8 V Applications

* Battery management

* Load switch

* Low gate charge

* High performance trench technology for

FDG330P Datasheet (150.13 KB)

Preview of FDG330P PDF

Datasheet Details

Part number:

FDG330P

Manufacturer:

Fairchild Semiconductor

File Size:

150.13 KB

Description:

P-channel 1.8v specified powertrench mosfet.

📁 Related Datasheet

FDG332PZ MOSFET (Fairchild Semiconductor)

FDG311N N-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)

FDG312P P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)

FDG312P P-Channel MOSFET (ON Semiconductor)

FDG313N N-Channel Digital FET (Fairchild Semiconductor)

FDG313N N-Channel Digital FET (ON Semiconductor)

FDG314P Digital FET/ P-Channel (Fairchild Semiconductor)

FDG315N N-Channel Logic Level PowerTrench MOSFET (Fairchild Semiconductor)

FDG315N N-Channel MOSFET (ON Semiconductor)

FDG316P P-Channel Logic Level PowerTrench MOSFET (Fairchild Semiconductor)

TAGS

FDG330P P-Channel 1.8V Specified PowerTrench MOSFET Fairchild Semiconductor

Image Gallery

FDG330P Datasheet Preview Page 2 FDG330P Datasheet Preview Page 3

FDG330P Distributor