Part number:
FDG330P
Manufacturer:
Fairchild Semiconductor
File Size:
150.13 KB
Description:
P-channel 1.8v specified powertrench mosfet.
* 2 A,
* 12 V. RDS(ON) = 110 mΩ @ VGS =
* 4.5 V RDS(ON) = 150 mΩ @ VGS =
* 2.5 V RDS(ON) = 215 mΩ @ VGS =
* 1.8 V Applications
* Battery management
* Load switch
* Low gate charge
* High performance trench technology for
FDG330P
Fairchild Semiconductor
150.13 KB
P-channel 1.8v specified powertrench mosfet.
📁 Related Datasheet
FDG332PZ MOSFET (Fairchild Semiconductor)
FDG311N N-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDG312P P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDG312P P-Channel MOSFET (ON Semiconductor)
FDG313N N-Channel Digital FET (Fairchild Semiconductor)
FDG313N N-Channel Digital FET (ON Semiconductor)
FDG314P Digital FET/ P-Channel (Fairchild Semiconductor)
FDG315N N-Channel Logic Level PowerTrench MOSFET (Fairchild Semiconductor)
FDG315N N-Channel MOSFET (ON Semiconductor)
FDG316P P-Channel Logic Level PowerTrench MOSFET (Fairchild Semiconductor)