FDG315N Datasheet - ON Semiconductor

FDG315N N-Channel MOSFET

This N *Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on *state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered app.

FDG315N Features

* 2 A, 30 V

* RDS(ON) = 0.12 W @ VGS = 10 V

* RDS(ON) = 0.16 W @ VGS = 4.5 V

* Low Gate Charge (2.1 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON)

* Compact Industry Standard SC70

* 6 Surface Mount Package

* Th

FDG315N-ONSemiconductor.pdf