FDG315N Datasheet, Mosfet, ON Semiconductor

✔ FDG315N Features

2 A, 30 V
RDS(ON) = 0.12 W @ VGS = 10 V
RDS(ON) = 0.16 W @ VGS = 4.5 V
Low Gate Charge (2.1 nC Typical)
High Performance Trench Technology for Extremely Low RDS

✔ FDG315N Application

where low in
line power loss and fast switching are required. Features
2 A, 30 V
RDS(ON) = 0.12 W @ VGS

PDF File Details

ON Semiconductor manufacturer logo and representative part image

Part number:

FDG315N

Manufacturer:

ON Semiconductor ↗

File Size:

298.57 KB

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📄 Datasheet

Description:

N-channel mosfet. This N*Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored

📥 Download PDF (298.57 KB)

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Stock and price

Rochester Electronics LLC

2A, 30V, N-CHANNEL, MOSFET

DigiKey

FDG315N

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FDG315N N-Channel MOSFET ON Semiconductor