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FDG315N N-Channel MOSFET

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Description

MOSFET * N-Channel, Logic Level, POWERTRENCH) FDG315N General .
This N. Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minim.

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Features

* 2 A, 30 V
* RDS(ON) = 0.12 W @ VGS = 10 V
* RDS(ON) = 0.16 W @ VGS = 4.5 V
* Low Gate Charge (2.1 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(ON)
* Compact Industry Standard SC70
* 6 Surface Mount Package
* Th

Applications

* where low in

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