FDG6304P Datasheet - ON Semiconductor

FDG6304P Dual P-Channel Digital FET

These dual P *Channel logic level enhancement mode field effect transistors are produced using onsemi proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on *state resistance. This device has been designed especially for lo.

FDG6304P Features

* 25 V,

* 0.41 A Continuous,

* 1.5 A Peak  RDS(ON) = 1.1 W @ VGS =

* 4.5 V  RDS(ON) = 1.5 W @ VGS =

* 2.7 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V)

* Gate

* Source Zener for ESD Rugg

FDG6304P-ONSemiconductor.pdf