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FDG6304P Dual P-Channel Digital FET

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Description

Digital FET, Dual P-Channel FDG6304P General .
These dual P. Channel logic level enhancement mode field effect transistors are produced using onsemi proprietary, high cell density, DMOS tech.

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Features

* 25 V,
* 0.41 A Continuous,
* 1.5 A Peak  RDS(ON) = 1.1 W @ VGS =
* 4.5 V  RDS(ON) = 1.5 W @ VGS =
* 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V)
* Gate
* Source Zener for ESD Rugg

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Dual P-Channel Digital FET ON Semiconductor
ON Semiconductor FDG6304P-like datasheet