FDG6304P - Dual P-Channel Digital FET

ON Semiconductor

FDG6304P Datasheet Preview — Preview of FDG6304P PDF

Datasheet Details

Part number	FDG6304P
Manufacturer	ON Semiconductor ↗
File Size	233.14 KB
Description	Dual P-Channel Digital FET
Datasheet	FDG6304P-ONSemiconductor.pdf

FDG6304P Product details

Description

These dual P Channel logic level enhancement mode field effect transistors are produced using onsemi proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance.

Features

25 V,.
0.41 A Continuous,.
1.5 A Peak  RDS(ON) = 1.1 W @ VGS =.
4.5 V  RDS(ON) = 1.5 W @ VGS =.
2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
Gate.
Source Zener for ESD Ruggedness (>6 kV Human Body Model).
Compact Industry Standard SC70.
6 Surface Mount Package.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Dec 24, 2023 |