FDG6302P Datasheet, Fet, Fairchild Semiconductor

FDG6302P Features

• Fet -25 V, -0.14 A continuous, -0.4 A peak. RDS(ON) = 10 Ω @ VGS= -4.5 V, RDS(ON) = 13 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS

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Part number:

FDG6302P

Manufacturer:

Fairchild Semiconductor

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📄 Datasheet

Description:

Dual p-channel/ digital fet. These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell dens

FDG6302P Application

• Applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features -25 V, -0.14 A continuous, -0.4 A peak. RDS(ON) =

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FDG6302P

Fairchild Semiconductor

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