FDG6320C Datasheet (ON Semiconductor) - Dual-Channel Digital FET

FDG6320C, Dual-Channel Digital FET

These dual N & P *Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology, this very high density process is especially tailored to minimize on *state resistance.

This device has been designed e

FDG6320C Features

* N

* Ch 0.22 A, 0.25 V

* RDS(ON) = 4.0 W @ VGS = 4.5 V

* RDS(ON) = 5.0 W @ VGS = 2.7 V

* P

* Ch

* 0.14 A,

* 25 V

* RDS(ON) = 10 W @ VGS =

* 4.5 V

* RDS(ON) = 13 W @ VGS =

* 2.7 V

* Very Small Package Out