FDG6321C - Dual-Channel Digital FET

ON Semiconductor

FDG6321C Datasheet Preview — Preview of FDG6321C PDF

Datasheet Details

Part number	FDG6321C
Manufacturer	ON Semiconductor ↗
File Size	229.09 KB
Description	Dual-Channel Digital FET
Datasheet	FDG6321C-ONSemiconductor.pdf

FDG6321C Product details

Description

These dual N & P Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance.

Features

N.
Ch 0.50 A, 25 V.
RDS(ON) = 0.45 W @ VGS = 4.5 V.
RDS(ON) = 0.60 W @ VGS = 2.7 V.
P.
Ch.
0.41 A,.
25 V.
RDS(ON) = 1.1 W @ VGS =.
4.5 V.
RDS(ON) = 1.5 W @ VGS =.
2.7 V.
Very Small Package Outline SC70.
6.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
Gate.
Source Zener for ESD Ruggedness (>6 kV Human B.

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Published: Dec 24, 2023 |