FDG6321C Dual-Channel Digital FET

ON Semiconductor

Description

Digital FET, Dual N & P Channel FDG6321C General .
These dual N & P. Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMO.

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Datasheet Specifications

Part number: FDG6321C
Manufacturer: ON Semiconductor ↗
File Size: 229.09 KB
Datasheet: FDG6321C-ONSemiconductor.pdf
Description: Dual-Channel Digital FET

Features

* N
* Ch 0.50 A, 25 V
* RDS(ON) = 0.45 W @ VGS = 4.5 V
* RDS(ON) = 0.60 W @ VGS = 2.7 V
* P
* Ch
* 0.41 A,
* 25 V
* RDS(ON) = 1.1 W @ VGS =
* 4.5 V
* RDS(ON) = 1.5 W @ VGS =
* 2.7 V
* Very Small Package O

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FDG6321C Dual-Channel Digital FET ON Semiconductor

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