FDG6321C Datasheet - ON Semiconductor

FDG6321C Dual-Channel Digital FET

These dual N & P *Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on *state resistance. This device has been designed especially .

FDG6321C Features

* N

* Ch 0.50 A, 25 V

* RDS(ON) = 0.45 W @ VGS = 4.5 V

* RDS(ON) = 0.60 W @ VGS = 2.7 V

* P

* Ch

* 0.41 A,

* 25 V

* RDS(ON) = 1.1 W @ VGS =

* 4.5 V

* RDS(ON) = 1.5 W @ VGS =

* 2.7 V

* Very Small Package O

FDG6321C Datasheet (229.09 KB)

FDG6321C Datasheet Preview — Preview of FDG6321C PDF

Datasheet Details

Part number:

FDG6321C

Manufacturer:

ON Semiconductor ↗

File Size:

229.09 KB

Description:

Dual-channel digital fet.

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FDG6321C Dual-Channel Digital FET ON Semiconductor

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