FDG6321C Datasheet (ON Semiconductor) - Dual-Channel Digital FET

FDG6321C, Dual-Channel Digital FET

These dual N & P *Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on *state resistance.

This device has been designed especially

FDG6321C Features

* N

* Ch 0.50 A, 25 V

* RDS(ON) = 0.45 W @ VGS = 4.5 V

* RDS(ON) = 0.60 W @ VGS = 2.7 V

* P

* Ch

* 0.41 A,

* 25 V

* RDS(ON) = 1.1 W @ VGS =

* 4.5 V

* RDS(ON) = 1.5 W @ VGS =

* 2.7 V

* Very Small Package O