FDG6308P - P-Channel MOSFET
FDG6308P Features
* 0.6 A,
* 20 V. RDS(ON) = 0.40 Ω @ VGS =
* 4.5 V RDS(ON) = 0.55 Ω @ VGS =
* 2.5 V RDS(ON) = 0.80 Ω @ VGS =
* 1.8 V
* Low gate charge
* High performance trench technology for extremely low RDS(ON)
* Compact industry standard S
