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FDG6308P P-Channel MOSFET

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Description

FDG6308P January 2001 FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General .
This P-Channel 1.

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Features

* 0.6 A,
* 20 V. RDS(ON) = 0.40 Ω @ VGS =
* 4.5 V RDS(ON) = 0.55 Ω @ VGS =
* 2.5 V RDS(ON) = 0.80 Ω @ VGS =
* 1.8 V
* Low gate charge
* High performance trench technology for extremely low RDS(ON)
* Compact industry standard S

Applications

* Applications
* Battery management

FDG6308P Distributors

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FDG6308P P-Channel MOSFET Fairchild Semiconductor
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