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FDG6316P

P-Channel 1.8V Specified PowerTrench MOSFET

FDG6316P Features

* 0.7 A,

* 12 V. RDS(ON) = 270 mΩ @ VGS =

* 4.5 V RDS(ON) = 360 mΩ @ VGS =

* 2.5 V RDS(ON) = 650 mΩ @ VGS =

* 1.8 V Applications

* Battery management

* Load switch

* Low gate charge

* High performance trench technology fo

FDG6316P Datasheet (149.58 KB)

Preview of FDG6316P PDF

Datasheet Details

Part number:

FDG6316P

Manufacturer:

Fairchild Semiconductor

File Size:

149.58 KB

Description:

P-channel 1.8v specified powertrench mosfet.

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FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET Fairchild Semiconductor

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