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FDG6301N-F085 Dual N-Channel Digital FET

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Description

Dual N-Channel, Digital FET FDG6301N-F085 .

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Features

* 25 V, 0.22 A Continuous, 0.65 A Peak
* RDS(ON) = 4 Ω @ VGS = 4.5 V,
* RDS(ON) = 5 Ω @ VGS = 2.7 V.
* Very Low Level Gate Drive Requirements allowing Directop
* Eration in 3 V Circuits (VGS(th) < 1.5 V)
* Gate
* Source Zener for ESD Ruggedness (

Applications

* Low Voltage Applications as a Replacement for Bipolar Digital Transistors and Small Signal MOSFETs MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain to Source Voltage 25 V VGS Gate to Source Voltage 8V ID Drain Current Continuous

FDG6301N-F085 Distributors

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