FDG6313N Datasheet, Fet, Fairchild Semiconductor

FDG6313N Features

• Fet 25 V, 0.50 A continuous, 1.5 A peak. RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) =0.60 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(t

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FDG6313N

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Fairchild Semiconductor

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📄 Datasheet

Description:

Dual n-channel digital fet. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell dens

FDG6313N Application

• Applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features 25 V, 0.50 A continuous, 1.5 A peak. RDS(ON) = 0.4

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FDG6313N

Fairchild Semiconductor

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