FDG6313N

Dual N-Channel Digital FET

Fairchild Semiconductor

FDG6313N Features

* 25 V, 0.50 A continuous, 1.5 A peak. RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) =0.60 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface

FDG6313N General Description

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage a.

FDG6313N Datasheet (92.40 KB)

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Datasheet Details

Part number:

FDG6313N

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Fairchild Semiconductor

File Size:

92.40 KB

Description:

Dual n-channel digital fet.

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FDG6313N Dual N-Channel Digital FET Fairchild Semiconductor

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FDG6313N Features

FDG6313N General Description

Datasheet Details

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