FDG6301N Dual N-Channel/ Digital FET

Fairchild Semiconductor

Description

July 1999 FDG6301N Dual N-Channel, Digital FET General .
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technol.

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Datasheet Specifications

Part number: FDG6301N
Manufacturer: Fairchild Semiconductor
File Size: 226.61 KB
Datasheet: FDG6301N_FairchildSemiconductor.pdf
Description: Dual N-Channel/ Digital FET

Features

* 25 V, 0.22 A continuous, 0.65 A peak. RDS(ON) = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mou

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FDG6301N Dual N-Channel Digital FET Fairchild Semiconductor

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