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FDG6301N

Dual N-Channel/ Digital FET

FDG6301N Features

* 25 V, 0.22 A continuous, 0.65 A peak. RDS(ON) = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mou

FDG6301N General Description

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage a.

FDG6301N Datasheet (226.61 KB)

Preview of FDG6301N PDF

Datasheet Details

Part number:

FDG6301N

Manufacturer:

Fairchild Semiconductor

File Size:

226.61 KB

Description:

Dual n-channel/ digital fet.

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FDG6301N Dual N-Channel Digital FET Fairchild Semiconductor

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