FDG6318P

Dual P-Channel/ Digital FET

Fairchild Semiconductor

FDG6318P Features

* 0.5 A,

* 20 V. RDS(ON) = 780 mΩ @ VGS =

* 4.5 V RDS(ON) = 1200 mΩ @ VGS =

* 2.5 V

* Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).

* Compact industry standard SC70-6 surface mount package App

FDG6318P General Description

These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar dig.

FDG6318P Datasheet (123.67 KB)

FDG6318P Datasheet Preview — Preview of FDG6318P PDF

Datasheet Details

Part number:

FDG6318P

Manufacturer:

Fairchild Semiconductor

File Size:

123.67 KB

Description:

Dual p-channel/ digital fet.

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FDG6318P Dual P-Channel Digital FET Fairchild Semiconductor

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FDG6318P Features

FDG6318P General Description

Datasheet Details

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Description:

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