FDG6318P Datasheet, Fet, Fairchild Semiconductor

FDG6318P Features

• Fet
• 
    –0.5 A,
    –20 V. RDS(ON) = 780 mΩ @ VGS =
    –4.5 V RDS(ON) = 1200 mΩ @ VGS =
    –2.5 V
• Very low level gate

PDF File Details

Part number:

FDG6318P

Manufacturer:

Fairchild Semiconductor

File Size:

123.67kb

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📄 Datasheet

Description:

Dual p-channel/ digital fet. These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process th

FDG6318P Application

• Applications as a replacement for bipolar digital transistors and small signal MOSFETS. Features
• 
    –0.5 A,
    

TAGS

FDG6318P

Fairchild Semiconductor

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