FDG6318P - Dual P-Channel/ Digital FET

Fairchild Semiconductor

FDG6318P Datasheet Preview — Preview of FDG6318P PDF

Datasheet Details

Part number	FDG6318P
Manufacturer	Fairchild ↗ Semiconductor
File Size	123.67 KB
Description	Dual P-Channel/ Digital FET
Datasheet	FDG6318P_FairchildSemiconductor.pdf

FDG6318P Product details

Description

These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance.

Features

0.5 A,.
20 V. RDS(ON) = 780 mΩ @ VGS =.
4.5 V RDS(ON) = 1200 mΩ @ VGS =.
2.5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
Compact industry standard SC70-6 surface mount package.

📁 FDG6318P Similar Datasheet

FDG6317NZ - Dual N-Channel MOSFET (ON Semiconductor)
FDG6301N-F085 - Dual N-Channel Digital FET (ON Semiconductor)
FDG6304P - Dual P-Channel Digital FET (ON Semiconductor)
FDG6306P - P-Channel MOSFET (ON Semiconductor)
FDG6320C - Dual-Channel Digital FET (ON Semiconductor)
FDG6321C - Dual-Channel Digital FET (ON Semiconductor)
FDG6322C - Dual N & P Channel Digital FET (ON Semiconductor)
FDG6323L - Integrated Load Switch (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDG6318PZ - Dual P-Channel/ Digital FET
FDG6313N - Dual N-Channel Digital FET
FDG6316P - P-Channel 1.8V Specified PowerTrench MOSFET
FDG6301N - Dual N-Channel/ Digital FET
FDG6302P - Dual P-Channel/ Digital FET
FDG6303N - Dual N-Channel Digital FET

Published: Mar 30, 2005 |