FDG6318PZ Dual P-Channel/ Digital FET

Fairchild Semiconductor

Description

FDG6318PZ January 2003 FDG6318PZ Dual P-Channel, Digital FET General .
These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resista.

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Datasheet Specifications

Part number: FDG6318PZ
Manufacturer: Fairchild Semiconductor
File Size: 217.72 KB
Datasheet: FDG6318PZ_FairchildSemiconductor.pdf
Description: Dual P-Channel/ Digital FET

Features

* -0.5A, -20V. r DS(ON) = 780mΩ (Max)@ VGS = -4.5 V rDS(ON) = 1200mΩ (Max) @ V GS = -2.5 V
* Very low level gate drive requirements allowing direct operation in 3V circuits (V GS(TH) < 1.5V).
* Gate-Source Zener for ESD ruggedness (>1.4kV Human Body Model).
* Compact

Applications

* Battery management S G D D G Pin 1 S 1 or 4 6 or 3 D 5 or 2 G 4 or 1 S G 2 or 5 S D 3 or 6 SC70-6 Symbol VDSS VGS The pinouts are symmetrical; pin1 and pin 4 are interchangeable. MOSFET Maximum Ratings TA=25°C unless otherwise noted Parameter Drain to Source Voltage Gate to Source

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FDG6318PZ Dual P-Channel Digital FET Fairchild Semiconductor

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