FDG6318PZ Datasheet, Fet, Fairchild Semiconductor

FDG6318PZ Features

• Fet
• -0.5A, -20V. r DS(ON) = 780mΩ (Max)@ VGS = -4.5 V rDS(ON) = 1200mΩ (Max) @ V GS = -2.5 V
• Very low level gate drive requirements allowing direct operation in 3V circ

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Part number:

FDG6318PZ

Manufacturer:

Fairchild Semiconductor

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217.72kb

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📄 Datasheet

Description:

Dual p-channel/ digital fet. These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize

FDG6318PZ Application

• Applications
• Battery management S G D D G Pin 1 S 1 or 4 6 or 3 D 5 or 2 G 4 or 1 S G 2 or 5 S D 3 or 6 SC70-6 Symbol VDSS VGS The

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FDG6318PZ

Fairchild Semiconductor

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