FDG6322C Datasheet, Fet, ON Semiconductor

FDG6322C Features

• Fet N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline

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Part number:

FDG6322C

Manufacturer:

ON Semiconductor ↗

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📄 Datasheet

Description:

Dual n & p channel digital fet. These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, hig

FDG6322C Application

• Applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET

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FDG6322C

ON Semiconductor

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