FDG6317NZ Dual 20v N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDG6317NZ January 2004 FDG6317NZ Dual 20v N-Channel PowerTrench® MOSFET General .
This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convention.

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Datasheet Specifications

Part number: FDG6317NZ
Manufacturer: Fairchild Semiconductor
File Size: 138.48 KB
Datasheet: FDG6317NZ_FairchildSemiconductor.pdf
Description: Dual 20v N-Channel PowerTrench MOSFET

Features

* 0.7 A, 20 V. RDS(ON) = 400 mΩ @ VGS = 4.5 V RDS(ON) = 550 mΩ @ VGS = 2.5 V
* ESD protection diode (note 3)
* Low gate charge
* High performance trench technology for extremely low RDS(ON)

Applications

* DC/DC converter
* Power management
* Loadswitch S G D D G Pin 1 S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuo

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FDG6317NZ Dual 20v N-Channel PowerTrench MOSFET Fairchild Semiconductor

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