FDG6306P - P-Channel MOSFET

ON Semiconductor

FDG6306P Datasheet Preview — Preview of FDG6306P PDF

Datasheet Details

Part number	FDG6306P
Manufacturer	ON Semiconductor ↗
File Size	239.70 KB
Description	P-Channel MOSFET
Datasheet	FDG6306P-ONSemiconductor.pdf

FDG6306P Product details

Description

This P Channel 2.5 V specified MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process.It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V 12 V).

Features

0.6 A,.
20 V.
RDS(ON) = 420 mW @ VGS =.
4.5 V.
RDS(ON) = 630 mW @ VGS =.
2.5 V.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(ON).
Compact Industry Standard SC70.
6 Surface Mount Package.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Jul 3, 2022 |