FDG6306P

P-Channel MOSFET

ON Semiconductor

FDG6306P Features

* 0.6 A,

* 20 V

* RDS(ON) = 420 mW @ VGS =

* 4.5 V

* RDS(ON) = 630 mW @ VGS =

* 2.5 V

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(ON)

* Compact Industry Standard SC70

* 6 Surface Moun

FDG6306P Datasheet (239.70 KB)

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Datasheet Details

Part number:

FDG6306P

Manufacturer:

ON Semiconductor ↗

File Size:

239.70 KB

Description:

P-channel mosfet.

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FDG6306P P-Channel MOSFET ON Semiconductor

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FDG6306P Features

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