FDG6317NZ Dual N-Channel MOSFET

ON Semiconductor

Description

MOSFET * Dual, N-Channel, POWERTRENCH) 20 V, 2.1 A, 550 mW FDG6317NZ General .
This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or convention.

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Datasheet Specifications

Part number: FDG6317NZ
Manufacturer: ON Semiconductor ↗
File Size: 245.78 KB
Datasheet: FDG6317NZ-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* 0.7 A, 20 V  RDS(ON) = 400 mW @ VGS = 4.5 V  RDS(ON) = 550 mW @ VGS = 2.5 V
* Gate-Source Zener for ESD Ruggedness. HBM Class 1C
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(ON)
* Compact Industry Standard SC70-6 Surface Mount Package
* The

Applications

* DC-DC Converter
* Power Management
* Load Switch MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current: Continuous (Note1) Pulsed 20 V 12 V A 0.7 2.1 PD Power Dissipation for S

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FDG6317NZ Dual N-Channel MOSFET ON Semiconductor

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