FDG313N - N-Channel Digital FET

Fairchild Semiconductor

Datasheet Details

Part number	FDG313N
Manufacturer	Fairchild ↗ Semiconductor
File Size	713.24 KB
Description	N-Channel Digital FET
Datasheet	FDG313N_FairchildSemiconductor.pdf

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
Low gate charge (1.64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package.

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Published: Mar 30, 2005 |