FDG313N Datasheet (Fairchild Semiconductor)

FDG313N, N-Channel Digital FET

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a rep

FDG313N Features

* 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.

* Low gate charge (1.64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). Gate-Source Zener for ESD ruggedness (>