FDG313N N-Channel Digital FET

Fairchild Semiconductor

Description

FDG313N July 2000 FDG313N Digital FET, N-Channel General .
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: FDG313N
Manufacturer: Fairchild Semiconductor
File Size: 713.24 KB
Datasheet: FDG313N_FairchildSemiconductor.pdf
Description: N-Channel Digital FET

Features

* 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
* Low gate charge (1.64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). Gate-Source Zener for ESD ruggedness (>

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FDG313N N-Channel Digital FET Fairchild Semiconductor

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