FDG315N - N-Channel Logic Level PowerTrench MOSFET

Fairchild Semiconductor

FDG315N Datasheet Preview — Preview of FDG315N PDF

Datasheet Details

Part number	FDG315N
Manufacturer	Fairchild ↗ Semiconductor
File Size	81.10 KB
Description	N-Channel Logic Level PowerTrench MOSFET
Datasheet	FDG315N_FairchildSemiconductor.pdf

FDG315N Product details

Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V.
Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.

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Published: Mar 30, 2005 |