FDG315N

N-Channel Logic Level PowerTrench MOSFET

Fairchild Semiconductor

FDG315N Features

* 2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V.

* Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications

FDG315N General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications.

FDG315N Datasheet (81.10 KB)

FDG315N Datasheet Preview — Preview of FDG315N PDF

Datasheet Details

Part number:

FDG315N

Manufacturer:

Fairchild Semiconductor

File Size:

81.10 KB

Description:

N-channel logic level powertrench mosfet.

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FDG315N N-Channel Logic Level PowerTrench MOSFET Fairchild Semiconductor

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FDG315N Features

FDG315N General Description

Datasheet Details

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Description:

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